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Probabilistic spin logic (PSL) has recently been proposed as a novel computing paradigm that leverages random thermal fluctuations of interacting bodies in a system rather than deterministic switching of binary bits. A PSL circuit is an interconnected network of thermally unstable units called probabilistic bits (p-bits), whose output randomly fluctuates between bits 0 and 1. While the fluctuations generated by p-bits are thermally driven, and therefore, inherently stochastic, the output probability is tunable with an external source. Therefore, information is encoded through probabilities of various configuration of states in the network. Recent studies have shown that these systems can efficiently solve various types of combinatorial optimization problems and Bayesian inference problems that modern computers are unfit for. Previous experimental studies have demonstrated that a single magnetic tunnel junctions (MTJ) designed to be thermally unstable can operate tunable random number generator making it an ideal hardware solution for p-bits. Most proposals for designing an MTJ to operate as a p-bit involve patterning the MTJ as a circular nano-pillar to make the device thermally unstable and then use spin transfer torque (STT) as a tuning mechanism. However, the practical realization of such devices is very challenging since the fluctuation rate of these devices are very sensitive to any device variations or defects caused during fabrication. Despite this challenge, MTJs are still the most promising hardware solution for p-bits because MTJs are very unique in that they can be tuned by multiple other mechanisms such spin orbit torque, magneto-electric coupling, and voltage-controlled exchange coupling. Furthermore, multiple forces can be used simultaneously to drive stochastic switching signals in MTJs. This means there are a large number of methods to tune, or termed as bias, MTJs that can be implemented in p-bit circuits that can alleviate the current challenges of conventional STT driven p-bits. This article serves as a review of all of the different methods that have been proposed to drive random fluctuations in MTJs to operate as a probabilistic bit. Not only will we review the single-biasing mechanisms, but we will also review all the proposed dual-biasing methods, where two independent mechanisms are employed simultaneously. These dual-biasing methods have been shown to have certain advantages such as alleviating the negative effects of device variations and some biasing combinations have a unique capability called ‘two-degrees of tunability’, which increases the information capacity in the signals generated. 

Superparamagnetic tunnel junctions (sMTJs) are emerging as promising components for stochastic units in neuromorphic computing owing to their tunable random switching behavior. Conventional MTJ control methods, such as spin-transfer torque (STT) and spin–orbit torque (SOT), often require substantial power. Here, we introduce the voltage-controlled exchange coupling (VCEC) mechanism, enabling the switching between antiparallel and parallel states in sMTJs with an ultralow power consumption of only 40 nW, approximately 2 orders of magnitude lower than conventional STT-based sMTJs. This mechanism yields a sigmoid-shaped output response, making it ideally suited to neuromorphic computing applications. Furthermore, we validate the feasibility of integrating VCEC with SOT current control, offering an additional dimension for magnetic state manipulation. This work marks the first practical demonstration of the VCEC effect in sMTJs, highlighting its potential as a low-power control solution for probabilistic bits in advanced computing systems. 

Crystal symmetry plays an important role in the Hall effects. Unconventional spin Hall effect (USHE), characterized by Dresselhaus and out-of-plane spins, has been observed in materials with low crystal symmetry. Recently, antisymmetric planar Hall effect (APHE) was discovered in rutile RuO2 and IrO2 (101) thin films, which also exhibit low crystal symmetry. In this study, we report the observation of both USHE and APHE in IrO2 (111) films, using spin-torque ferromagnetic resonance and harmonic Hall measurements, respectively. Notably, the unconventional spin-torque efficiency from Dresselhaus spin was more than double that of a previous report. Additionally, the temperature dependence of APHE suggests that it arises from the Lorentz force, constrained by crystal symmetry. Symmetry analysis supports the coexistence of USHE and APHE and demonstrates that both originate from the crystal symmetry of IrO2 (111), paving the way for a deeper understanding of Hall effects and related physical phenomena. 

Modern cloud-native OLAP databases adopt a storage-disaggregation architecture that separates the management of compu- tation and storage. A major bottleneck in such an architecture is the network connecting the computation and storage layers. Computation pushdown is a promising solution to tackle this issue, which offloads some computation tasks to the storage layer to reduce network traffic. This paper presents FlexPushdownDB (FPDB), where we revisit the design of computation pushdown in a storage-disaggregation architecture, and then introduce several optimizations to further accelerate query pro- cessing. First, FPDB supports hybrid query execution, which combines local computation on cached data and computation pushdown to cloud storage at a fine granularity. Within the cache, FPDB uses a novel Weighted-LFU cache replacement policy that takes into account the cost of pushdown computation. Second, we design adaptive pushdown as a new mecha- nism to avoid throttling the storage-layer computation during pushdown, which pushes the request back to the computation layer at runtime if the storage-layer computational resource is insufficient. Finally, we derive a general principle to identify pushdown-amenable computational tasks, by summarizing common patterns of pushdown capabilities in existing systems, and further propose two new pushdown operators, namely, selection bitmap and distributed data shuffle. Evaluation on SSB and TPC-H shows each optimization can improve the performance by 2.2×, 1.9×, and 3× respectively. 

Adenylate kinase is a ubiquitous enzyme in living systems and undergoes dramatic conformational changes during its catalytic cycle. For these reasons, it is widely studied by genetic, biochemical, and biophysical methods, both experimental and theoretical. We have determined the basic crystal structures of three differently liganded states of adenylate kinase from Methanotorrus igneus, a hyperthermophilic organism whose adenylate kinase is a homotrimeric oligomer. The multiple copies of each protomer in the asymmetric unit of the crystal provide a unique opportunity to study the variation in the structure and were further analyzed using advanced crystallographic refinement methods and analysis tools to reveal conformational heterogeneity and, thus, implied dynamic behaviors in the catalytic cycle. 

Understanding the mechanisms of unidirectional magnetoresistance (UMR) has become an important topic for its potential application of a two-terminal spin–orbit torque device. Field sweep DC measurements have been proposed and adopted to measure the value of UMR instead of second harmonic measurements. In this paper, potential measurement errors in conventional DC measurements are investigated. Oersted field and field-like torque usually do not influence the measurement, but a large field-like torque was found to lead to an anisotropic magnetoresistance difference when the sample is not perfectly aligned with the external field. The existence of ordinary magnetoresistance was also found to contribute to a large background. In this paper, an alternative measurement method for UMR was proposed and demonstrated to address those issues related to previous DC measurements. Our work may broaden the understanding of the error sources of UMR measurements and provide a reliable DC measurement method for the characterization of UMR. 

Abstract Voltage‐Gated Spin‐Orbit‐Torque (VGSOT) Magnetic Random‐Access Memory (MRAM) is a promising candidate for reducing writing energy and improving writing speed in emerging memory and in‐memory computing applications. However, conventional Voltage Controlled Magnetic Anisotropy (VCMA) approaches are often inefficient due to the low VCMA coefficient at the CoFeB/MgO interface. Additionally, traditional heavy metal/perpendicular magnetic anisotropy (PMA) ferromagnet bilayers require an external magnetic field to overcome symmetry constraints and achieve deterministic SOT switching. Here, a novel and industry‐compatible SOT underlayer for next‐generation VGSOT MRAM by employing a composite heavy metal tri‐layer with a high work function is presented. This approach achieves a VCMA coefficient exceeding 100 fJ V⁻¹m⁻¹through electron depletion effects, which is ten times larger than that observed with a pure W underlayer. Furthermore, it is demonstrated that this composite heavy metal SOT underlayer facilitates the integration of VCMA with opposite spin Hall angles, enabling field‐free SOT switching in industry‐compatible PMA CoFeB/MgO systems.